- IBM公司Semiconductor R&D Center顾问科学家李正文博士报告
- 发布时间:2011-05-12 点击次数:1
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各位老师,同学,
我们很高兴请到IBM公司Semiconductor R&D Center的顾问科学家李正文博士到我所
交流,他是原子层沉积技术方面专家,博士期间在Harvard大学师从Roy G. Gordon教
授(ITO薄膜的发明者)从事ALD技术研究,毕业后进入IBM继续ALD在半导体工艺中应
用的设备与工艺研发。他的报告题目是:
“Overview of Atomic Layer Deposition: From ALD Reactor Design, to
Precursor Synthesis and Film Deposition”
时间:12月23日(星期三)10:00am
地点:A722
主持人: 陈立桅
报告摘要:
Atomic Layer Deposition (ALD) has become one of the most promising
candidates for making thin and continuous films recently with atomic-scale
thickness. Successful applications of ALD depend on whether appropriate
precursor chemistry can be designed and whether proper deposition
conditions can be developed. In this talk, ALD applications will be
overviewed in microelectronics, nanotechnologies, and surface coatings for
solar PV and batteries technologies, followed by ALD reactor design,
precursor requirement and characterization, ALD of metals and dielectrics,
and selected applications will be discussed in details, such as ALD Cu,
TiN, HfO2, capping layer for low-dielectrics, et. al.
李正文博士简历:2000年中国科学技术大学高分子化学与工程系获学士学位,2002年
美国布朗大学获硕士学位,2007年美国哈佛大学获博士学位,博士毕业后进入IBM公
司至今,任Semiconductor R&D Center的顾问科学家
内容详细