High-k on High-micro -- III-V MOSFETs enabled by atomic layer deposition
Professor:Peide (Peter) Ye
Time: 8/10/2009 10:00am
Place:A722

High-k on High-micro -- III-V MOSFETs enabled by atomic layer deposition
Peide (Peter) Ye
School of Electrical and Computer Engineering and Birck
Nanotechnology Center, Purdue University

Abstract
For the first time, high-performance III-V MOSFETs with
nanoscale high-k gate dielectrics grown by atomic layer
deposition (ALD) are demonstrated. The novel application of
the ALD process on III-V compound semiconductors affords
tremendous functionality and opportunity by enabling the
formation of high-quality gate oxides and passivation layers
on III-V devices. A 0.4-米m gate-length inversion-mode
n-channel Al2O3/InGaAs MOSFET shows a gate leakage current
density less than 10-4A/cm2, a record high maximum drain
current of 1.05 A/mm and a peak transconductance of 0.35
S/mm. The transconductance is improved to 1.3 S/mm at deep
sub-micron gate-length. The mid-gap interface trap density
(Dit) of high-k/GaAs and InGaAs is at the range of
1011-1012/cm2-eV. The InGaAs MOSFETs show the promise for
future high-speed low-power logic applications by
benchmarking the state-of-the-art Si MOSFETs. The review of
this work can be found in IEEE Spectrum September 2008 and
Science February 2009.

Peide (Peter) Ye received the B.S. degree in electrical
engineering from Fudan University, Shanghai, China, in 1988
and Ph.D. in solid state physics from Max-Planck-Institute
of Solid State Research, Stuttgart, Germany, in 1996. From
1996 to 2000, he was research fellow at NTT Basic Research
Laboratories and NHMFL/Princeton University. He joined Bell
Laboratories, Murray Hill, NJ and then Agere Systems in 2001
as a Member of Technical Staff and becomes a Senior Member
of Technical Staff in 2003. He is currently associate
professor of electrical and computer engineering at Purdue
University. His research activities include semiconductor
physics and devices, nano-structures and nano-fabrications,
quantum and spin transport, atomic layer deposition, III-V
MOSFETs, and recently graphene based nanoelectronics.