- Graphene Nanoribbons: Synthesis, Properties and Electronics
- Release time:2011-05-17 clicks:1
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Time: Sep 10th 10:00
Place:A429
1.Graphene Nanoribbons: Synthesis, Properties and Electronics
Xinran Wang
Stanford University, USA
Abstract:Graphene nano-electronics has been very attractive due to
high carrier mobility. The semi-metallic nature of bulk graphene
requires width confinement down to ~sub-10nm in order to induce adequate
bandgap for room temperature logic applications. In this talk, I will
present our recent works on graphene (nanoribbon) electronics.
First, we developed a unique chemical route to synthesize high
quality, ultra-smooth graphene nanoribbons (GNRs) with width below 10nm.
Transport measurements show that the bandgap scales inversely with GNR
widths, indicating that bandgap opens in narrow GNRs due to quantum
confinement. The first room temperature p-type graphene field-effect
transistor (FET) is demonstrated with our chemically derived sub-10nm
GNR.
We next access the performance of chemically derived sub-10nm GNR
FETs. At on state, the current density could be as high as ~2000uA/um,
with on/off ratio ~ 106, subthreshold slope ~210mV/dec. The performance
of sub-10nm GNR FETs is comparable to small diameter (d<1.2nm) carbon
nanotube (CNT) FETs. The intrinsic carrier mobility and scattering mean
free path is ~200cm2/Vs and ~10nm, respectively. We discuss the possible
scattering mechanisms in the GNRs.
Compared to CNTs, GNRs have open edges with high chemical reactivity.
We can take advantage of this fact and chemically modify the GNR edges
to change the electronic properties. We found that individual GNRs could
be covalently functionalized by nitrogen species through high-power
electrical joule heating in NH3 gas, leading to n-type electronic doping
consistent with theory. The formation of C-N bond occurs mostly at the
edges of graphene where chemical reactivity is high. We fabricated an n-
type N-doped graphene field-effect transistor (FET) that operates at
room temperature.
2.Ripple texturing of suspended graphene atomic membranes
Wenzhong Bao
University of California, Riverside
Abstract: We investigate one-dimensional (1D) and 2D periodic ripples
in suspended graphene sheets, using spontaneously and thermally induced
longitudinal strains on patterned substrates. By in-situ SEM imaging, we
provide the first measurement of graphene’s thermal expansion
coefficient, which is anomalously large and negative, ~-7x10-6 K-1 at
300K. Latest progress towards transport measurement in these devices
will be discussed
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